366.086 Materials, processes and technologies for MEMS
This course is in all assigned curricula part of the STEOP.
This course is in at least 1 assigned curriculum part of the STEOP.

2022W, VU, 2.0h, 3.0EC
TUWELQuinn ECTS survey


  • Semester hours: 2.0
  • Credits: 3.0
  • Type: VU Lecture and Exercise
  • Format: Presence

Learning outcomes

After successful completion of the course, students are able to...

... describe the different fabrication techniques of silicon carbide, evaluate their pro and cons as well as their field of application.
... evaluate the electrical and mechanical properties of silicon carbide with respect to other semiconductors.
... explain the process and functionalization techniques of silicon carbide and the corresponding technological challenges.
... name, rate and discuss the field of application of silicon carbide for power electronics and microsystems technology.

Subject of course

This course will focus on the carbide materials, especially on silicon carbide (SiC). SiC is a material of growing importance in the field of MEMS and microelectronic applications. The course is divided into the following chapters: 

Deposition techniques
Besides the production methods for bulk SiC, special techniques such as LPCVD and PECVD for the deposition of polycrystalline or amorphous SiC thin films as well as homo and hetero epitaxy for the deposition of single crystalline 4H-SiC and 3C-SiC layers will be covered. Doping of SiC with respect to microelectronic applications will be subject of the course as well.

Material properties
SiC exhibits extraordinary thermal, electrical, chemical, mechanical and structural properties, all of which will be presented. Additionally, advanced optical and electrical characterization methods such as DLTS will be explained.

Patterning and functionalization
Besides the well known methods for thin film patterning such as wet and dry etching, electrochemical techniques for porosification of SiC thin films will be a main focus. Furthermore, the biocompatible properties of SiC will be discussed.

Applications in microelectronics
In this chapter, the implementation of SiC into MOSFET/MESFET/JFET and diode structures will be discussed as well as the importance of SiC in regard to high power electronics and optoelectronics.

Applications in MEMS
Besides its use in electronics, SiC is increasingly used in MEMS devices due to its excellent mechanical and thermal properties. In this course, devices like SiC based MEMS sensors for harsh environments (for temperature, gas or pressure sensing) and micro hot plates for chemical sensors will be discussed.

Teaching methods

Lecture in presence with course (Flipped Classroom)

Mode of examination




Course dates

Tue13:00 - 15:0004.10.2022Seminarraum 366 Preliminary Lecture
Tue13:00 - 15:0011.10.2022 - 06.12.2022Seminarraum 366 Lecture
Tue13:00 - 15:0020.12.2022 Online (LIVE)Lecture - Attention: Online
Tue13:00 - 15:0024.01.2023Seminarraum 366 Lecture
Materials, processes and technologies for MEMS - Single appointments
Tue04.10.202213:00 - 15:00Seminarraum 366 Preliminary Lecture
Tue11.10.202213:00 - 15:00Seminarraum 366 Lecture
Tue25.10.202213:00 - 15:00Seminarraum 366 Lecture
Tue22.11.202213:00 - 15:00Seminarraum 366 Lecture
Tue06.12.202213:00 - 15:00Seminarraum 366 Lecture
Tue20.12.202213:00 - 15:00 OnlineLecture - Attention: Online
Tue24.01.202313:00 - 15:00Seminarraum 366 Lecture

Examination modalities

Following the course, there will be an oral exam.

Course registration

Begin End Deregistration end
16.09.2022 08:00 07.10.2022 23:59 07.10.2022 23:59


Study CodeObligationSemesterPrecon.Info
066 434 Materials Sciences Not specified
066 508 Microelectronics and Photonics Not specified


No lecture notes are available.