After successful completion of the course, students are able to...
After successful completion of the course, students should have the basic knowledge of crystal structures, crystal structure analysis by x-ray diffraction, epitaxial growth of heterostructures. Students are able to understand and solve example problems related to semiconductor heterostructures, epitaxial growth, and characterization.
An introduction to the physics of various deposition and epitaxial growth techniques for the production of single crystal thin films and heterostructures, an explanation and comparison of research and industrial techniques, plus characterization methods for the production of epitaxial structures (Dielectrics, Semiconductors, Metals / Superconductors), description of various growth methods (MBE, MO-MBE, ALE, CVD, MO) CVD, laser CVD, PA-CVD, LPE, etc.) and the necessary equipment (vacuum technology, material sources, substrate pre-treatment, etc.), doping methods, "in situ" and "ex situ" analysis methods (composition, purity, structure analysis, charge carriers , optical and electrical properties), production methods for nanostructures by various growth techniques (quantum wires by overgrowth, etc.), and a discussion of possible application of the latest material systems.
