After successful completion of the course, students are able to

• discuss essential differences between idealized and real electronic devices.
• describe degradation mechanisms in real devices with physics based models.
• critically evaluate the state-of-the-art research on device reliability.
• assess various reliability models regarding their applicability.

Keywords: idealized vs. real device behavior, variability, ideal crystals and interfaces vs. real structures, defects, fundamentals of defect physics, fundamentals of chemical reactions and stochastic/deterministic modeling methods, interactions of defects with devices, important degradation phenomena: negative/positive bias temperature instability (NBTI/PBTI), hot carrier degradation, time-dependent dielectric breakdown (TDDB), noise (random telegraph noise (RTN), 1/f noise).

Lectures, calculation and simulation exercises with a discussion of the results

Oral examination after positive review of the practical part - registration in TISS.

Die Unterlagen befinden sich unter

https://tgras.iue.tuwien.ac.at/owncloud/public.php?service=files&t=4d0174cdf5fa53bebf48b419b17aa0ea

Kenntnisse in Quantenmechanik werden erwartet (VU Quantenelektronik, 360.227)