360.223 Selected Topics - Microelectronic Devices, Simulation Canceled
This course is in all assigned curricula part of the STEOP.
This course is in at least 1 assigned curriculum part of the STEOP.

2023S, VU, 4.0h, 5.0EC


  • Semester hours: 4.0
  • Credits: 5.0
  • Type: VU Lecture and Exercise
  • Format: Presence

Learning outcomes

After successful completion of the course, students are able to

  • describe the structure and working principles of microelectronic devices,
  • qualitatively estimate the impact of design parameters (geometry, doping, etc.) on the performance of devices,
  • choose suitable models for the numerical simulation of devices,
  • simulate the behavior of devices in different operating regimes using a TCAD software package.

Subject of course

After a short introduction to the simulation environment, electrostatic problems such as line conductors and plate capacitors are considered. For these simple problems, the numerical solution is compared with the analytical solution. In the next step, the material properties of semiconductors like the temperature and field dependence of mobility, the charge carrier densities as a function of doping, the Shockley-Haynes experiment and drift in contrast to diffusion is investigated in silicon.  Then the central element of microelectronics, the pn transition, is considered in detail. Examples are pn, p+n, pin and Schottky diodes, which are investigated in both static and dynamic operation (small signal vs. large signal). Transistors such as Bipolar Transistor, JFET and MOSFET are also thourougly discussed and simulated.  Effects such as gain, temperature dependence, capacitance, early effect in comparison to channel width modulation, and nonlinearities can be investigated in detail as a function of e.g. doping.

The students deepen their acquired knowledge by means of exercises to be worked out independently. The basic structures are predefined with the help of simulation templates. After suitable selection of the geometric dimensions and the dopant distributions, the simulations are carried out and the results are documented. The individual examples of exercises as well as the simulation results are continuously discussed in the lecture part.

Teaching methods

Lectures on the theoretical foundations, simulation exercises followed by a discussion of the results

Mode of examination


Additional information

Preliminary discussion: during the first lecture of the course

Registration in TISS is required for participation in the course.



Examination modalities

Nine simulation tasks have to be solved and a report for each task written. Results are jointly discussed.

Course registration

Begin End Deregistration end
30.01.2023 19:00 16.03.2023 19:00


Study CodeObligationSemesterPrecon.Info
033 235 Electrical Engineering and Information Technology Mandatory elective
066 434 Materials Sciences Not specified
066 460 Physical Energy and Measurement Engineering Mandatory elective


Die Folien zum Vorlesungsteil sowie ausgearbeitete Musterbeispiele und Übungsangaben werden den Studierenden in den jeweiligen Vorlesungsteilen zur Verfügung gestellt.


  • Attendance Required!