After successful completion of the course, students are able to

• scientifically investigate current challenges in the field of semiconductor physics/TCAD.
• adequately present and defend their research results before a professional audience.
• evaluate scientific publications in their own research area and recognize possible implications on their own work.

Physical problems relevant to semiconductor device modeling are considered. The subjects are related to current research projects of the institute. Examples are: energy transport models and moment equations of higher order, carrier mobility in strained semiconductor layers, impact ionization, Monte Carlo simulation of carrier transport, size quantization in inversion layers and hetero-structures, and modeling of tunneling currents.

Discussions with the supervisor, presentation of results before peers.

The findings of this work have to be summarized in a brief report, and an oral presentation has to be given. 

beim Vortragenden, Gußhausstr. 27-29, Stiege 1, 5.Stock, Raum CAO535

completed diploma or master study