After successful completion of the course, students are able to analyse the used materials i.e. silicon starting material, dopants, dielectrics, and metals and to explain and assess the silicon devices. They are able to interpret and judge the relationships between physical functions of the device and material mechanisms at interfaces, in rection zones, with crystal defects, and material migration.

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Based on the corresponding script the topics are covered during the lecture

General Introduction of the lecture:

Tuesday, March 7th, 2023,  13:00-14:00

FH HS6

oral individual exam at the end of the semester. Estimated duration: 30 min

Bei der Vorbesprechung.